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MemCell.h
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/*******************************************************************************
* Copyright (c) 2012-2013, The Microsystems Design Labratory (MDL)
* Department of Computer Science and Engineering, The Pennsylvania State University
* Exascale Computing Lab, Hewlett-Packard Company
* All rights reserved.
*
* This source code is part of NVSim - An area, timing and power model for both
* volatile (e.g., SRAM, DRAM) and non-volatile memory (e.g., PCRAM, STT-RAM, ReRAM,
* SLC NAND Flash). The source code is free and you can redistribute and/or modify it
* by providing that the following conditions are met:
*
* 1) Redistributions of source code must retain the above copyright notice,
* this list of conditions and the following disclaimer.
*
* 2) Redistributions in binary form must reproduce the above copyright notice,
* this list of conditions and the following disclaimer in the documentation
* and/or other materials provided with the distribution.
*
* THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" AND
* ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
* WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
* DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE
* FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL
* DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR
* SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER
* CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY,
* OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE
* OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
*
* Author list:
* Cong Xu ( Email: czx102 at psu dot edu
* Website: http://www.cse.psu.edu/~czx102/ )
* Xiangyu Dong ( Email: xydong at cse dot psu dot edu
* Website: http://www.cse.psu.edu/~xydong/ )
*******************************************************************************/
#ifndef MEMCELL_H_
#define MEMCELL_H_
#include <iostream>
#include <stdio.h>
#include <stdlib.h>
#include <string.h>
#include "typedef.h"
using namespace std;
class MemCell {
public:
MemCell();
virtual ~MemCell();
/* Functions */
void ReadCellFromFile(const std::string & inputFile);
void CellScaling(int _targetProcessNode);
double GetMemristance(double _relativeReadVoltage); /* Get the LRS resistance of memristor at log-linera region of I-V curve */
void CalculateWriteEnergy();
double CalculateReadPower();
void PrintCell();
/* Properties */
MemCellType memCellType; /* Memory cell type (like MRAM, PCRAM, etc.) */
int processNode; /* Cell original process technology node, Unit: nm*/
double area; /* Cell area, Unit: F^2 */
double aspectRatio; /* Cell aspect ratio, H/W */
double widthInFeatureSize; /* Cell width, Unit: F */
double heightInFeatureSize; /* Cell height, Unit: F */
double resistanceOn; /* Turn-on resistance */
double resistanceOff; /* Turn-off resistance */
double capacitanceOn; /* Cell capacitance when memristor is on */
double capacitanceOff; /* Cell capacitance when memristor is off */
bool readMode; /* true = voltage-mode, false = current-mode */
double readVoltage; /* Read voltage */
double readCurrent; /* Read current */
double minSenseVoltage; /* Minimum sense voltage */
double wordlineBoostRatio; /*TO-DO: function not realized: ratio of boost wordline voltage to vdd */
double readPower; /* Read power per bitline (uW)*/
bool resetMode; /* true = voltage-mode, false = current-mode */
double resetVoltage; /* Reset voltage */
double resetCurrent; /* Reset current */
double resetPulse; /* Reset pulse duration (ns) */
double resetEnergy; /* Reset energy per cell (pJ) */
bool setMode; /* true = voltage-mode, false = current-mode */
double setVoltage; /* Set voltage */
double setCurrent; /* Set current */
double setPulse; /* Set pulse duration (ns) */
double setEnergy; /* Set energy per cell (pJ) */
CellAccessType accessType; /* Cell access type: CMOS, BJT, or diode */
/* Optional properties */
int stitching; /* If non-zero, add stitching overhead for every x cells */
double gateOxThicknessFactor; /* The oxide thickness of FBRAM could be larger than the traditional SOI MOS */
double widthSOIDevice; /* The gate width of SOI device as FBRAM element, Unit: F*/
double widthAccessCMOS; /* The gate width of CMOS access transistor, Unit: F */
double voltageDropAccessDevice; /* The voltage drop on the access device, Unit: V */
double leakageCurrentAccessDevice; /* Reverse current of access device, Unit: uA */
double capDRAMCell; /* The DRAM cell capacitance if the memory cell is DRAM, Unit: F */
double widthSRAMCellNMOS; /* The gate width of NMOS in SRAM cells, Unit: F */
double widthSRAMCellPMOS; /* The gate width of PMOS in SRAM cells, Unit: F */
/* For memristor */
bool readFloating; /* If unselected wordlines/bitlines are floating to reduce total leakage */
double resistanceOnAtSetVoltage; /* Low resistance state when set voltage is applied */
double resistanceOffAtSetVoltage; /* High resistance state when set voltage is applied */
double resistanceOnAtResetVoltage; /* Low resistance state when reset voltage is applied */
double resistanceOffAtResetVoltage; /* High resistance state when reset voltage is applied */
double resistanceOnAtReadVoltage; /* Low resistance state when read voltage is applied */
double resistanceOffAtReadVoltage; /* High resistance state when read voltage is applied */
double resistanceOnAtHalfReadVoltage; /* Low resistance state when 1/2 read voltage is applied */
double resistanceOffAtHalfReadVoltage; /* High resistance state when 1/2 read voltage is applied */
double resistanceOnAtHalfResetVoltage; /* Low resistance state when 1/2 reset voltage is applied */
/* For NAND flash */
double flashEraseVoltage; /* The erase voltage, Unit: V, highest W/E voltage in ITRS sheet */
double flashPassVoltage; /* The voltage applied on the unselected wordline within the same block during programming, Unit: V */
double flashProgramVoltage; /* The program voltage, Unit: V */
double flashEraseTime; /* The flash erase time, Unit: s */
double flashProgramTime; /* The SLC flash program time, Unit: s */
double gateCouplingRatio; /* The ratio of control gate to total floating gate capacitance */
};
#endif /* MEMCELL_H_ */